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| AP9563H/J Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -40V 40m -26A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9563J) is available for low-profile applications. G D S GD S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -40 25 -26 -16 -64 44.6 0.36 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 110 Units /W /W Data and specifications subject to change without notice 200227041 AP9563H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -40 -1 - Typ. -0.03 18 19 4 9 10 37 52 80 230 180 Max. Units 40 60 -3 -1 -25 100 30 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-16A VGS=-4.5V, ID=-12A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-12A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS= 25V ID=-12A VDS=-32V VGS=-4.5V VDS=-20V ID=-12A RG=3.3,VGS=-10V RD=1.6 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 1460 2340 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-12A, VGS=0V IS=-12A, VGS=0V, dI/dt=-100A/s Min. - Typ. 40 54 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP9563H/J 100 90 T A = 25 C 80 o -10V -7.0V -ID , Drain Current (A) 80 TA=150oC -10V -7.0V 70 -ID , Drain Current (A) 60 60 -5.0V 40 50 -5.0V -4.5V 40 -4.5V 30 20 V G = -3.0 V 20 V G = -3.0 V 10 0 0 2 4 6 8 10 12 14 0 0 2 4 6 8 10 12 14 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 46 1.8 42 I D = -12 A T C =25 Normalized R DS(ON) 1.6 I D =-16A V G =-10V 1.4 RDS(ON) (m ) 38 1.2 1.0 34 0.8 30 0.6 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.5 6 5 2 4 3 T j =150 o C T j =25 o C -VGS(th) (V) -IS(A) 1.5 2 1 1 0 0.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9563H/J 12 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) 10 V DS =-32V I D =-12A 8 C (pF) C iss 1000 6 4 2 C oss C rss 0 0 10 20 30 40 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 0.2 0.1 -ID (A) 10 0.1 0.05 1ms PDM 0.02 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthjc + TC T c =25 C Single Pulse 1 0.1 1 10 o 10ms 100ms DC 100 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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